| Authors: | N. Quack, A.Y. Takabayashi, H. Sattari, P. Edinger, G. Jo, S.J. Bleiker, C. Errando-Herranz, K.B. Gylfason, F. Niklaus, U. Khan, P. Verheyen, A. Kumar Mallik, J.S. Lee, M. Jezzini, I. Zand, P. Morrissey, C. Antony, P. O'Brien, W. Bogaerts | | Title: | Integrated Silicon Photonic MEMS | | Format: | International Journal | | Publication date: | 3/2023 | | Journal/Conference/Book: | MicroSystems & Nanoengineering
| | Editor/Publisher: | Nature-Springer, | | Volume(Issue): | 9 p.27 | | DOI: | 10.1038/s41378-023-00498-z | | Citations: | 52 (Dimensions.ai - last update: 24/11/2024)
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Abstract
Silicon Photonics has recently emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of sSilicon Pphotonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized Ssilicon pPhotonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high efficiency optical and electrical interfaces. However, silicon's relatively weak electro-optic effects result in modulators with significant footprint, and thermo-optic tuning devices require high power consumption. Both constitute substantial impediments for very large-scale integration in silicon photonics. Micro-electromechanical systems (MEMS) technology can enhance sSilicon pPhotonics with building blocks that are compact, low-loss, broadband, fast and require very low-power consumption. We here introduce a sSilicon pPhotonic MEMS platform, consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fiber-array attach for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements including power couplers, phase shifters and wavelength-division multiplexing devices in standardized technology lifts previous impediments and will enable scaling to very large photonic integrated circuits for applications in telecommunications, sensing, and quantum computing. Related Research Topics
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