| Authors: | M. Billet, L. Reis, Y. Leger, C. Cornet, F. Raineri, I. Sagnes, K. Pantzas, G. Beaudoin, G. Roelkens, F. Leo, B. Kuyken | | Title: | Gallium phosphide-on-insulator integrated photonic structures fabricated using micro-transfer printing | | Format: | International Journal | | Publication date: | 12/2021 | | Journal/Conference/Book: | Optical Materials Express
| | Editor/Publisher: | Optica publishing group, | | Citations: | Look up on Google Scholar
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Abstract
Gallium phosphide-on-insulator emerged recently as a promising platform for integrated nonlinear photonics due to its intrinsic material properties. However, current integration solutions, using direct die-to-wafer bonding, do not support spatially localized integration with CMOS circuits which induce a large and expensive footprint material need. Here we demonstrate the transfer of gallium phosphide layers to an oxidized silicon wafer using micro-transfer printing as a new approach for versatile future (hybrid) integration. Using this novel approach, we demonstrate as a proof of concept the fabrication of gallium phosphide-on-insulator ring resonators with Q-factors as high as 35 000. Related Research Topics
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