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Authors: J. Rahimi Vaskasi, J. Van kerrebrouck, B. Haq, J. Bauwelinck, G. Roelkens, G. Morthier
Title: Demonstration of a High-efficiency Short-cavity III-V-on-Si C-band DFB Laser Diode
Format: International Journal
Publication date: 5/2022
Journal/Conference/Book: IEEE Journal on Selected Topics in Quantum Electronics
Editor/Publisher: IEEE, 
Volume(Issue): 28(3)
DOI: 10.1109/JSTQE.2021.3122552
Citations: 12 (Dimensions.ai - last update: 24/11/2024)
7 (OpenCitations - last update: 21/10/2024)
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Abstract

In this paper we demonstrate a high wall-plug efficiency and low threshold current for heterogeneously integrated III-V-on-Silicon distributed feedback (DFB) lasers. Above 12% wall plug efficiency is achieved for a 200 µm long DFB laser diode at 25 ⁰C. Up to two times 6 mW of optical power is coupled into the silicon waveguide and more than 40 dB side-mode suppression ratio is obtained. We also discuss the non-return-to-zero on-off keying modulation at 20 Gb/s and the transmission over a 2 km long optical fiber.

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