Authors:	M. Shahin, K. Ma, A. Abbasi, G. Roelkens, G. Morthier
Title:	45 Gbps Direct Modulation of Two-Section InP-on-Si DFB Laser Diodes
Format:	International Journal
Publication date:	4/2018
Journal/Conference/Book:	IEEE Photonics Technology Letters
Editor/Publisher:	IEEE,
Volume(Issue):	30(8) p.685-687
DOI:	10.1109/LPT.2018.2811906
Citations:	8 (Dimensions.ai - last update: 16/2/2025) 8 (OpenCitations - last update: 27/6/2025) Look up on Google Scholar
Download:	(569KB)

Abstract

Two-section heterogeneously integrated InP-on-Si DFB laser diodes are demonstrated. In the modulation response, the relaxation oscillation frequency of 10 GHz is followed by a second resonance to achieve nearly 25 GHz 3-dB modulation bandwidth and 45 Gbps NRZ-OOK transmission.

Related Research Topics

• InP on Si lasers for telecommunication applications
• High-speed direct modulation III-V/Si DFB lasers

Related Projects

• IAP: Photonics@be (Photonics@be)