| Authors: | J. Zhang, Y. Li, S. Dhoore, G. Morthier, G. Roelkens | | Title: | Unidirectional, widely-tunable and narrow-linewidth heterogeneously integrated III-V-on-silicon laser | | Format: | International Journal | | Publication date: | 3/2017 | | Journal/Conference/Book: | Optics Express
| | Volume(Issue): | 25(6) p.7092-7100 | | Location: | United States | | DOI: | 10.1364/OE.25.007092 | | Citations: | 21 (Dimensions.ai - last update: 24/11/2024)
16 (OpenCitations - last update: 27/6/2024)
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Abstract
A heterogeneously integrated widely tunable III-V-on-silicon ring laser with
unidirectional operation is demonstrated. 40 nm tuning range (from 1560 nm to 1600 nm) is
obtained using the Vernier effect between two ring resonators incorporated in the ring laser
cavity. Unidirectional operation is obtained by integrating a DBR reflector coupling the
clockwise and counterclockwise mode of the ring laser cavity. Unidirectional operation is
obtained over the entire tuning range with about 10 dB suppression of the clockwise mode.
The laser linewidth is lower than 1 MHz over the entire tuning range, down to 550 kHz in the
optimum operation point. The waveguide-coupled output power is above 0 dBm over the
entire tuning range. Related Research Topics
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