| Authors: | H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, G. Roelkens, J. Van Campenhout | | Title: | Dark Current Analysis in High-speed Germanium p-i-n Waveguide Photodetectors | | Format: | International Journal | | Publication date: | 6/2016 | | Journal/Conference/Book: | Journal of Applied Physics
| | Volume(Issue): | 119(21) p.213105 | | DOI: | 10.1063/1.4953147 | | Citations: | 75 (Dimensions.ai - last update: 24/11/2024)
59 (OpenCitations - last update: 27/6/2024)
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Abstract
We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, surface leakage current and bulk leakage current were separated, and their activation energies were extracted. Surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and (reverse bias) voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Related Research Topics
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