| Authors: | A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout | | Title: | Extraction of Carrier Lifetime using Pump Probe Spectroscopy on Integrated Ge Waveguides | | Format: | International Journal | | Publication date: | 6/2016 | | Journal/Conference/Book: | Applied Physics Letters
| | Volume(Issue): | 108 p.211101 | | DOI: | 10.1063/1.4952432 | | Citations: | 16 (Dimensions.ai - last update: 24/11/2024)
13 (OpenCitations - last update: 27/6/2024)
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Abstract
Carrier lifetimes in Ge-on-Si waveguides are deduced using time-resolved infrared transmission
pump-probe spectroscopy. Dynamics of pump-induced excess carriers generated in waveguides
with varying Ge thickness and width is probed using a CW laser. The lifetimes of these excess carriers
strongly depend on the thickness and width of the waveguide due to defect assisted surface
recombination. Interface recombination velocities of 0.975x10^4 cm/s and 1.45x10^4 cm/s were
extracted for the Ge/Si and the Ge/SiO2 interfaces, respectively. Related Research Topics
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