| Authors: | A. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepage, P. Absil, J. Van Campenhout, D. Van Thourhout | | Title: | Carrier Lifetime Assessment in Integrated Ge Waveguide Devices | | Format: | International Conference Proceedings | | Publication date: | 8/2015 | | Journal/Conference/Book: | 12th International Conference on Group IV Photonics (GFP)
| | Volume(Issue): | p.ThC2 | | Location: | Vancouver, Canada | | DOI: | 10.1109/group4.2015.7305916 | | Citations: | 1 (Dimensions.ai - last update: 24/11/2024)
1 (OpenCitations - last update: 27/6/2024)
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Abstract
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 um wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2e19 cm-3. Related Research Topics
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