Authors:	J. Brouckaert, G. Roelkens, S. Selvaraja, W. Bogaerts, P. Dumon, S. Verstuyft, Z. Yu, D. Van Thourhout, R. Baets
Title:	Miniature Integrated Spectrometer Fabricated on a Silicon-on-Insulator Substrate
Format:	International Conference Proceedings
Publication date:	11/2008
Journal/Conference/Book:	Leos Annual Meeting
Volume(Issue):	p.MF3
Location:	Newport Beach, United States
DOI:	10.1109/leos.2008.4688485
Citations:	5 (Dimensions.ai - last update: 24/11/2024) 4 (OpenCitations - last update: 3/5/2024) Look up on Google Scholar
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Abstract

We demonstrate a compact and cost-effective 30-channel integrated spectrometer fabricated on a nanophotonic silicon-on-insulator (SOI) platform. The spectrometer consists of a planar concave grating (PCG) demultiplexer with heterogeneously integrated III-V photodetectors. The device has a resolution of 3.2nm and a small footprint of ~2mm2. The photodetectors have a dark current of ~3nA at 5V bias and a responsivity of 1A/W.
The on-chip loss for the central PCG channels is 3dB,
resulting in an on-chip responsivity of 0.5A/W.

Related Research Topics

• Silicon (nano)photonic devices fabrication with 193nm and 248nm (DUV) Optical lithography (1999-2012)
• Die-to-wafer bonding technology (2003-2012)
• Photo-spectrometer based on heterogeneous integration (2004-2009)

Related Projects

• IWT: epSOC (electro-photonic System-On-Chip)
• ICT: WADIMOS (WAvelength DIvision multiplexing optical layer on CMOS)
• ICT: HELIOS (pHotonics ELectronics functional Integration on CMOS)