| Authors: | F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets, J.L. Gentner | | Title: | GSMBE growth of GaInAsP/InP 1.3 ìm-TM-lasers for monolithic integration with optical waveguide isolator | | Format: | International Journal | | Publication date: | 5/2005 | | Journal/Conference/Book: | Journal of Crystal Growth
| | Volume(Issue): | 278(1-4) p.709-713 | | DOI: | 10.1016/j.jcrysgro.2004.12.154 | | Citations: | 4 (Dimensions.ai - last update: 24/11/2024)
3 (OpenCitations - last update: 3/5/2024)
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Abstract
The GSMBE growth of GaInAsP/InP 1.3-ìm-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-ìm-GaInAsP:Be contacting layers provide a good electrical contact between the III–V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack up to fifteen 12-nm-thick −1.1% tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8k A/cm2 and characteristic temperature of 75 K (in the range of 20–80 °C) are obtained for 600 ìm-long lasers comprising 6 QWs. The possible wavelength extension of TM lasers to 1.55-ìm is also discussed. Related Research Topics
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